Floating body germanium phototransistor with photo...

Details Floating body germanium phototransistor with photo... Floating body germanium phototransistor with photo...

2007-10-02

2007-10-02

Nguyen, Cuong (Department: 2811)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S149000, C438S479000

Reexamination Certificate

active

11261191

ABSTRACT:
A floating body germanium (Ge) phototransistor with a photo absorption threshold bias region, and an associated fabrication process are presented. The method includes: providing a p-doped Silicon (Si) substrate; selectively forming an insulator layer overlying a first surface of the Si substrate; forming an epitaxial Ge layer overlying the insulator layer; forming a channel region in the Ge layer; forming a gate dielectric, gate electrode, and gate spacers; forming source/drain (S/D) regions in the Ge layer; and, forming a photo absorption threshold bias region in the Ge layer, adjacent the channel region. In one aspect, the second S/D region has a length, longer than the first S/D length. The photo absorption threshold bias region underlies the second S/D region. Alternately, the second S/D region is separated from the channel by an offset, and the photo absorption threshold bias region is the offset in the Ge layer, after a light p-doping.

REFERENCES:
patent: 6838301 (2005-01-01), Zheng et al.
patent: 2006/0237746 (2006-10-01), Orlowski et al.

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