Floating body germanium phototransistor

Details Floating body germanium phototransistor Floating body germanium phototransistor

2007-09-18

2007-09-18

Nguyen, Cuong (Department: 2811)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S164000, C438S341000, C438S413000, C438S479000

Reexamination Certificate

active

11174035

ABSTRACT:
A floating body germanium (Ge) phototransistor and associated fabrication process are presented. The method includes: providing a silicon (Si) substrate; selectively forming an insulator layer overlying the Si substrate; forming an epitaxial Ge layer overlying the insulator layer using a liquid phase epitaxy (LPE) process; forming a channel region in the Ge layer; forming a gate dielectric, gate electrode, and gate spacers overlying the channel region; and, forming source/drain regions in the Ge layer. The LPE process involves encapsulating the Ge with materials having a melting temperature greater than a first temperature, and melting the Ge using a temperature lower than the first temperature. The LPE process includes: forming a dielectric layer overlying deposited Ge; melting the Ge; and, in response to cooling the Ge, laterally propagating an epitaxial growth front into the Ge from an underlying Si substrate surface.

REFERENCES:
patent: 2006/0237746 (2006-10-01), Orlowski et al.
Yaocheng Liu, Michael D. Deal, and James D. Plummer, “High quality single-crystal Ge on insulator by liquid-phase epitaxy on Si substrate,” Applied Physics Letters, vol. 84, No. 14, pp. 2563-2565, 2004.
Yaocheng Liu, Kailash Gopalakrishnan, Peter B. Griffin, Kai Ma, Michael D. Deal, and James D. Plummer, “MOSFET and high speed photodetectors on Ge-on-insulator substrates fabricated using rapid melt growth,” IEDM pp. 1001-1004, 2004.
Weiquan Zhang, Mansun Chan, and Ping K. Ko, “ Performance of the floating gate/body tied NMOSFET photodetector on SOI substrate,” IEEE Trans on Electron Devices, vol. 47, No. 7, pp. 1375-1383, 2000.

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