Floating-body cell (FBC) semiconductor storage device having...

Details Floating-body cell (FBC) semiconductor storage device having... Floating-body cell (FBC) semiconductor storage device having...

2005-12-08

2008-10-07

Tran, Andrew Q (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185260, C365S185270, C257S350000, C257S347000

Reexamination Certificate

active

07433234

ABSTRACT:
A semiconductor storage device including a memory cell. In the memory cell a buried electrode is formed on a semiconductor substrate. A semiconductor layer is formed on the buried electrode via a buried insulating film. A surface electrode is formed on the semiconductor layer via an insulating film. A source region and drain region are formed in the semiconductor layer on both sides of the surface electrode with a predetermined spacing therebetween. A floating body is formed between the source region and drain region, which stores data in accordance with whether holes are stored in the floating body. The buried electrode serves as a gate electrode, and the surface electrode serves as a plate electrode.

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