Flipchip QFN package

Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame

Reexamination Certificate

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Details

C257S676000, C257S678000, C257S787000, C257S690000

Reexamination Certificate

active

07112871

ABSTRACT:
A semiconductor device (10) includes a first leadframe (18) having a perimeter (20) that defines a cavity (22) and leads (14) extending inwardly from the perimeter, and a second leadframe (32) having top and bottom surfaces and a die paddle surrounding a die receiving area (36). An integrated circuit (12) is placed within the die receiving area of the second leadframe. The IC has bonding pads (44) located on a peripheral portion of its top surface. The second leadframe and the IC are in facing relation with the first leadframe such that the leads of the first leadframe are electrically connected to respective ones of the bonding pads. A mold compound (50) is injected between the first and second leadframes and covers the second leadframe top surface and a central area of the first surface of the IC. At least the bottom surfaces of the leads are exposed.

REFERENCES:
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patent: 4894752 (1990-01-01), Murata et al.
patent: 5157480 (1992-10-01), McShane et al.
patent: 5172214 (1992-12-01), Casto
patent: 5200362 (1993-04-01), Lin et al.
patent: 5262674 (1993-11-01), Banerji et al.
patent: 5273938 (1993-12-01), Lin et al.
patent: 5552966 (1996-09-01), Nagano
patent: 6593545 (2003-07-01), Greenwood et al.
patent: 2001/0052647 (2001-12-01), Plepys et al.
patent: 2003/0178717 (2003-09-01), Singh
patent: 2003/0214048 (2003-11-01), Wu et al.

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