Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame
Reexamination Certificate
2006-09-26
2006-09-26
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Lead frame
C257S676000, C257S678000, C257S787000, C257S690000
Reexamination Certificate
active
07112871
ABSTRACT:
A semiconductor device (10) includes a first leadframe (18) having a perimeter (20) that defines a cavity (22) and leads (14) extending inwardly from the perimeter, and a second leadframe (32) having top and bottom surfaces and a die paddle surrounding a die receiving area (36). An integrated circuit (12) is placed within the die receiving area of the second leadframe. The IC has bonding pads (44) located on a peripheral portion of its top surface. The second leadframe and the IC are in facing relation with the first leadframe such that the leads of the first leadframe are electrically connected to respective ones of the bonding pads. A mold compound (50) is injected between the first and second leadframes and covers the second leadframe top surface and a central area of the first surface of the IC. At least the bottom surfaces of the leads are exposed.
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Chow Wai Wong
He Qing-Chun
Shiu Hei Ming
Bergere Charles
Freescale Semiconductor, INC
Smith Zandra V.
Tran Thanh Y.
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