Flip chip type nitride semiconductor light-emitting diode

Details Flip chip type nitride semiconductor light-emitting diode Flip chip type nitride semiconductor light-emitting diode

2007-11-13

2007-11-13

Tran, Minh-Loan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

C257S099000, C257SE33065

Reexamination Certificate

active

10925934

ABSTRACT:
A flip chip type nitride semiconductor light-emitting diode includes a light-transmissive substrate for growing nitride single crystals; an n-type nitride semiconductor layer formed on the light-transmissive substrate; an active layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a mesh-type dielectric layer formed on the p-type nitride semiconductor layer and having a mesh structure with a plurality of open regions in which the p-type nitride semiconductor layer is exposed; a highly reflective ohmic contact layer formed on the mesh-type dielectric layer and the open regions in which the p-type nitride semiconductor layer is exposed; and a p-bonding electrode and an n-electrode formed on the highly reflective ohmic contact layer and the n-type nitride semiconductor layer, respectively.

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Japanese Patent Office, Office Action mailed Jun. 19, 2007 and English Translation.

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