Flip chip type nitride semiconductor light emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure

Reexamination Certificate

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Details

C257S103000, C257S704000, C257S705000, C257SE33062, C257SE33064, C257SE33066

Reexamination Certificate

active

11319343

ABSTRACT:
The present invention relates to a flip chip type nitride semiconductor light emitting device having p-type and n-type nitride semiconductor layers, and an active layer in between. The invention also has an ohmic contact layer formed on the p-type nitride semiconductor layer, a light-transmitting conductive oxide layer formed on the ohmic contact layer, and a highly reflective metal layer formed on the light-transmitting conductive oxide layer.

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