Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2007-11-20
2007-11-20
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S103000, C257S704000, C257S705000, C257SE33062, C257SE33064, C257SE33066
Reexamination Certificate
active
11319343
ABSTRACT:
The present invention relates to a flip chip type nitride semiconductor light emitting device having p-type and n-type nitride semiconductor layers, and an active layer in between. The invention also has an ohmic contact layer formed on the p-type nitride semiconductor layer, a light-transmitting conductive oxide layer formed on the ohmic contact layer, and a highly reflective metal layer formed on the light-transmitting conductive oxide layer.
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Chae Seung Wan
Ko Kun Yoo
Shim Hyun Wook
Yi Bong Il
Yoon Suk Kil
Cruz Leslie Pilar
Samsung Electro-Mechanics Co. Ltd.
Tran Minhloan
Volpe and Koenig P.C.
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