Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead
Reexamination Certificate
2007-01-30
2007-01-30
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
C257S666000, C257S673000, C257S676000, C257S692000, C257S773000, C257S775000, C257S778000, C257SE23031, C257SE23037, C257SE23043, C438S123000
Reexamination Certificate
active
10965093
ABSTRACT:
A flip-chip semiconductor package with a lead frame and a method for fabricating the same are provided. The lead frame has a plurality of leads, each lead having an upper surface, a lower surface, and an inner end directed toward the center of the lead frame. A recessed portion is formed on the upper surface of the inner end of each lead, making the inner end shaped as a stepped structure. The depth of the recessed portion is equal to a height of a reflow-collapsed solder bump that is for electrically connecting a chip to the lead. At least one chip is electrically connected to the leads in a flip-chip manner via a plurality of solder bumps bonded to the recessed portions. An encapsulation body is formed to encapsulate the lead frame, chip and solder bumps, with the lower surfaces of the leads being exposed from the encapsulation body.
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Wu Chi-Chuan
Yang Ke-Chuan
Corless Peter F.
Edwards Angell Palmer & & Dodge LLP
Jensen Steven M.
Rodela Eduardo A.
Siliconware Precision Industries Co. Ltd.
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