Flip chip semiconductor device with dual purpose metallized grou

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For high frequency device

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257778, 257780, 257774, 333246, 333247, H01L 2334, H01L 2348, H01P 100

Patent

active

056357621

ABSTRACT:
Semiconductor device for the microwave frequency ranges includes a semiconductor element of the "flip chip" type which comprises a semiconductor substrate having an active surface with at least one integrated circuit, a plurality of metal input-output pads and a circuit of transmission lines of the coplanar type having conductor strips and ground metallizations disposed on the active surface. A circuit of transmission lines of the microstrip type with conductor strips disposed on a surface opposed to the active surface and whose ground metallizations are formed by the ground metallization of the active surface. A base plate comprising an insulating substrate having a front surface with a plurality of metal input-output pads and ground metallizations patterned so as to be in electrical contact with the ground metallizations of the active surface of the semiconductor element when the latter is bonded to the base plate. The active surface of the semiconductor element is bonded to the front surface of the base plate with the corresponding input-output pads in electrical contact with one another.

REFERENCES:
patent: 4992764 (1991-02-01), Ayasli
patent: 5404581 (1995-04-01), Hanjo

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