Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2007-03-13
2007-03-13
Tran, Thien F. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S099000, C257S101000, C257S102000, C257S103000, C257SE33004
Reexamination Certificate
active
11016956
ABSTRACT:
A flip-chip light emitting device and a method of manufacturing thereof are provided. The flip-chip nitride light emitting device includes a substrate, an n type clad layer, an active layer, a p type clad layer, a multi ohmic contact layer, and a reflective layer, which are stacked in this order, wherein the multi ohmic contact layer is obtained by repeatedly stacking at least one stack unit of a reforming metal layer and a transparent conductive thin film, and wherein the reforming metal layer mainly contains silver (Ag). According to the flip-chip light emitting device and the method of manufacturing thereof, since the ohmic contact characteristics associated with a p type clad layer can be improved, it is possible to increase wire bonding efficiency and yield in a packaging process. In addition, since a low non-contact resistance and a good current-voltage characteristic can be obtained, it is possible to improve light emitting efficiency and to expand life time of the flip-chip light emitting device.
REFERENCES:
patent: 2002/0171087 (2002-11-01), Krames et al.
patent: 2000-164928 (2000-06-01), None
patent: 2002-151739 (2002-05-01), None
Korean Office Action dated Oct. 27, 2005.
Seong Tae-yeon
Song June-o
Gwangju Institute of Science and Technology
Tran Thien F.
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