Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2011-01-18
2011-01-18
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S099000
Reexamination Certificate
active
07872271
ABSTRACT:
Provided are a flip-chip nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising a reflective layer formed on the p-type clad layer and at least one transparent conductive thin film layer made up of transparent conductive materials capable of inhibiting diffusion of materials constituting the reflective layer, interposed between the p-type clad layer and reflective layer; and a process for preparing the same. In accordance with the flip-chip nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact properties with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.
REFERENCES:
patent: 6822272 (2004-11-01), Yanamoto
patent: 7042012 (2006-05-01), Senda et al.
patent: 7190002 (2007-03-01), Seong et al.
patent: 2002/0080463 (2002-06-01), Tonar et al.
patent: 2002/0171087 (2002-11-01), Krames
patent: 2003/0104705 (2003-06-01), Fudeta et al.
patent: 2005/0001224 (2005-01-01), Chen
patent: 2005/0121685 (2005-06-01), Seong et al.
patent: 0926744 (1999-06-01), None
patent: 09-129919 (1997-05-01), None
patent: 10-020320 (1998-01-01), None
patent: 10-173222 (1998-06-01), None
patent: 11-191641 (1999-07-01), None
patent: 2000-294837 (2000-10-01), None
patent: 2003-124518 (2003-04-01), None
patent: 2003-163373 (2003-06-01), None
patent: 2004-179347 (2004-06-01), None
patent: 2004-179365 (2004-06-01), None
Office Action dated Mar. 16, 2010 issued in corresponding Japanese Application No. 2007-521401 and English translation thereof.
Office Action dated Oct. 25, 2010 issued in corresponding Japanese Application No. 2007-521401 and English translation thereof.
Hong Woong-Ki
Kim Kyoung-Kook
Seong Tae-Yeon
Song June-O
Harness Dickey & Pierce PLC
Jahan Bilkis
Louie Wai-Sing
Samsung LED Co., Ltd.
LandOfFree
Flip-chip light emitting diodes and method of manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Flip-chip light emitting diodes and method of manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flip-chip light emitting diodes and method of manufacturing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2642197