Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Having diverse electrical device
Reexamination Certificate
2004-07-27
2008-11-25
Tran, Minh-Loan T (Department: 2826)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Having diverse electrical device
C438S026000, C438S028000, C438S033000, C438S508000
Reexamination Certificate
active
07456035
ABSTRACT:
In a method for fabricating a flip-chip light emitting diode device, epitaxial layers (14, 114) are deposited on a growth substrate (16, 116) to produce an epitaxial wafer. A plurality of light emitting diode devices are fabricated on the epitaxial wafer. The epitaxial wafer is diced to generate a device die (10, 110). The device die (10, 110) is flip chip bonded to a mount (12, 112). The flip chip bonding includes securing the device die (10, 110) to the mount (12, 112) by bonding at least one electrode (20, 22, 120) of the device die (10, 110) to at least one bonding pad (26, 28, 126) of the mount (12, 112). Subsequent to the flip chip bonding, a thickness of the growth substrate (16, 116) of the device die (10, 110) is reduced.
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Product Specifications, “Silicon Carbide Substrates,” Cree Materials, pp. 1-5, Effective Dec. 1998—Revised Mar. 2003, Version MAT-Catalog.000.
Eliashevich Ivan
Kolodin Boris
Stefanov Emil P.
Fay Sharpe LLP
Lumination LLC
Tran Minh-Loan T
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