Flip-chip light emitting diode and method of manufacturing...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

Reexamination Certificate

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C257S778000

Reexamination Certificate

active

11002797

ABSTRACT:
Provided are a flip-chip light emitting diode (FCLED) and a method of manufacturing the same. The provided FCLED is formed by sequentially depositing an n-type cladding layer, an active layer, a p-type cladding layer, and a reflective layer on a substrate. The reflective layer is formed of the alloy of silver to which a solute element is added. According to the provided FCLED and the method of manufacturing the same, a thermal stability is improved to improve an ohmic contact characteristic to a p-type cladding layer, thus a wire bonding efficiency and a yield are improved when packaging the provided FCLED. In addition, the light emitting efficiency and the lifespan of the provided FCLED are improved due to a low specific-contact resistance and an excellent current-voltage characteristic.

REFERENCES:
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patent: 2002/0171087 (2002-11-01), Krames et al.
patent: 2003/0205712 (2003-11-01), Bhat et al.
patent: 2006/0081867 (2006-04-01), Kim et al.
patent: 0 733 931 (1996-09-01), None
patent: 11-191641 (1999-07-01), None
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Korean Office Action dated Oct. 27, 2005.
Official Action issued by the Patent Office of the People's Republic of China in corresponding Chinese Patent Application No. 200410103926.X; Mar. 9, 2007; and English translation thereof.

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