Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2006-10-10
2006-10-10
Lee, Eddie C. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S104000, C257S086000, C257S094000, C257S098000, C257S103000, C257S013000, C257S096000, C257S778000
Reexamination Certificate
active
07119372
ABSTRACT:
A flip chip light emitting diode die (10, 10′, 10″) includes a light-transmissive substrate (12, 12′, 12″) and semiconductor layers (14, 14′, 14″) that are selectively patterned to define a device mesa (30, 30′, 30″). A reflective electrode (34, 34′, 34″) is disposed on the device mesa (30, 30′, 30″). The reflective electrode (34, 34′, 34″) includes a light-transmissive insulating grid (42, 42′, 60, 80) disposed over the device mesa (30, 30′, 30″), an ohmic material (44, 44′, 44″, 62) disposed at openings of the insulating grid (42, 42′, 60, 80) and making ohmic contact with the device mesa (30, 30′, 30″), and an electrically conductive reflective film (46, 46′, 46″) disposed over the insulating grid (42, 42′, 60, 80) and the ohmic material (44, 44′, 44″, 62). The electrically conductive reflective film (46, 46′, 46″) electrically communicates with the ohmic material (44, 44′, 44″, 62).
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Cao Xian-an
D'Evelyn Mark P.
Ebong Abasifreke U.
LeBoeuf Steven F.
Sandvik Peter M.
Fay Sharpe Fagan Minnich & McKee LLP
GELcore LLC
Im Junghwa
Lee Eddie C.
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