Flip-chip die and flip-chip package substrate

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead

Reexamination Certificate

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Details

C257S778000, C257S779000, C257S780000, C257S773000, C257S774000, C257S700000

Reexamination Certificate

active

06861740

ABSTRACT:
A flip-chip die and a flip-chip package substrate. The flip-chip die has an active surface containing a plurality of core power/ground pads, at least one signal pad rings, at least one power pad rings and at least one ground pad rings. The core power/ground pads are located in the central region of the die while the die pad rings are arranged concentrically just outside the central power/ground pad occupied region. The uppermost layer of the flip-chip package substrate has a plurality of bump pads that correspond to the die pads on the die. Non-signal bump pad rings may also form outside the signal bump pad ring. Pairs of power trace or ground trace may also form on the sides of a signal trace in any one of the wiring layers within the flip-chip package substrate to serve as guard traces for the signal trace.

REFERENCES:
patent: 6479758 (2002-11-01), Arima et al.

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