Flip chip bonding structure

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads

Reexamination Certificate

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Details

C257S738000, C257S772000, C257S778000, C257S780000, C257S786000, C257SE23021, C438S108000, C228S180220

Reexamination Certificate

active

07598613

ABSTRACT:
A semiconductor device is provided with: a solid device having a connection surface formed with a connection electrode projected therefrom; a semiconductor chip which has a functional surface formed with a metal bump projected therefrom and which is bonded to the connection surface of the solid device as directing its functional surface to the connection surface and maintaining a predetermined distance between the functional surface and the connection surface; and a connecting member containing a low melting point metal having a lower solidus temperature than that of the connection electrode and the bump, and interconnecting the connection electrode and the bump. A sum of a height of the connection electrode and a height of the bump is not less than a half of the predetermined distance.

REFERENCES:
patent: 6229220 (2001-05-01), Saitoh et al.
patent: 6734556 (2004-05-01), Shibata
patent: 7382049 (2008-06-01), Ho et al.
patent: 2002/0149117 (2002-10-01), Shibata
patent: 2004/0169286 (2004-09-01), Shibata
patent: 2007/0164447 (2007-07-01), Ho et al.
patent: 7-211722 (1995-08-01), None
patent: 2002-289768 (2002-10-01), None
J.D.Wu et al., “Electromigration Reliability of SnAgXCuX Flip Chip Interconnects”, 54th Electronic Components and Technol. Conf., 2004, pp. 961-967.

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