Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2005-09-01
2009-10-06
Chambliss, Alonzo (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S738000, C257S772000, C257S778000, C257S780000, C257S786000, C257SE23021, C438S108000, C228S180220
Reexamination Certificate
active
07598613
ABSTRACT:
A semiconductor device is provided with: a solid device having a connection surface formed with a connection electrode projected therefrom; a semiconductor chip which has a functional surface formed with a metal bump projected therefrom and which is bonded to the connection surface of the solid device as directing its functional surface to the connection surface and maintaining a predetermined distance between the functional surface and the connection surface; and a connecting member containing a low melting point metal having a lower solidus temperature than that of the connection electrode and the bump, and interconnecting the connection electrode and the bump. A sum of a height of the connection electrode and a height of the bump is not less than a half of the predetermined distance.
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J.D.Wu et al., “Electromigration Reliability of SnAgXCuX Flip Chip Interconnects”, 54th Electronic Components and Technol. Conf., 2004, pp. 961-967.
Miyata Osamu
Tanida Kazumasa
Chambliss Alonzo
Rabin & Berdo PC
Rohm & Co., Ltd.
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