Flexible semiconductor device with groove(s) on rear side of...

Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame – With means for controlling lead tension

Reexamination Certificate

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Details

C257S668000

Reexamination Certificate

active

07112872

ABSTRACT:
To provide a semiconductor device capable of corresponding to an applied bending stress by flexibly changing its shape, and to provide a semiconductor device module, a manufacturing method of the semiconductor device, and a manufacturing method of the semiconductor device module. In a silicon substrate whose front surface is provided with an element forming layer having an element forming region where a semiconductor element is formed, a groove is formed in a portion of the rear surface of the silicon substrate corresponding to a region of the element forming layer where a semiconductor element is not formed.

REFERENCES:
patent: 4905575 (1990-03-01), Knecht et al.
patent: 5531002 (1996-07-01), Okada
patent: 5912427 (1999-06-01), Willis et al.
patent: 2001/0012035 (2001-08-01), Silverbrook
patent: 05-251616 (1993-09-01), None
patent: 11-204720 (1999-07-01), None
patent: 11-307586 (1999-11-01), None
patent: WO 200079288 (2000-12-01), None

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