Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular signal path connections
Reexamination Certificate
2002-06-07
2004-09-28
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
With particular signal path connections
C716S030000
Reexamination Certificate
active
06797999
ABSTRACT:
FIELD OF THE INVENTION
This invention relates generally to the semiconductor feature known as via holes, or “vias,” and more particularly to routing channels among such vias.
BACKGROUND OF THE INVENTION
Via holes, or more simply “vias,” are semiconductor device features that are through holes made in a substrate, for a variety of different purposes. Via holes may be used to ground semiconductor devices and passive devices. Via holes may be made through dielectric layers, for subsequent metal deposition to form a plug and create an interconnect between two metal lines. Multi-level interconnect schemes may employ such via holes. Processes used to perform such interconnection using via holes include the damascene process and the dual-damascene process, among other processes.
Within an integrated circuit (IC) layout that has a number of metal layers, vias are particularly employed to connect signals from lower metal layers to upper metal layers. However, the presence of the vias blocks the routing of wires horizontally. The typical solution to this difficulty is to add a limited number of routing channels among the vias. Wires can then be placed or fabricated through or within the routing channels to enable horizontal routing along one or both axes of the horizontal plane. Thus, using routing channels enables horizontal routing through the IC layout.
A difficulty with this current deployment of routing channels, however, is that they do not provide flexible routing within the IC layout. In particular, the placement orientation of the layout relative to the horizontal plane may have to be fixed, so that the wires running through or within the routing channels remain in the same direction relative to the routing channels. This constrains semiconductor designs and fabricators in designing and fabricating semiconductor IC's. In turn, this adds cost to the semiconductor device design and fabrication processes, as well as introducing delay into these oftentimes-critical processes.
FIG. 1
shows an exploded three-dimensional perspective view of a sample IC layout
100
that exhibits the routing inflexibility of placing routing channels among vias in the prior art. Three layers of the IC layout
100
are shown: top and bottom inter-metal dielectric (IMD) layers
102
and
106
, sandwiching a middle metal layer
104
. Via holes are located within the IMD layers
102
and
106
, to connect the middle metal layer
104
with other metal layers above and below the middle metal layer
104
, respectively. However, they are not shown in
FIG. 1
for illustrative clarity.
A horizontal plane is defined by the x-axis
112
and the y-axis
114
. Thus, whereas the via holes not shown in
FIG. 1
connect the metal layer
104
to other metal layers through the IMD layers
102
and
106
along the z-axis
116
, the routing channels enable routing wire, such as copper or aluminum wire, to route through the IC layout
100
along the horizontal plane. In particular, there are two routing channels through the metal layer
104
represented by the arrows
108
, along the x-axis
112
. However, there are no corresponding routing channels through the metal layer
104
along the y-axis
114
, as aptly indicated in
FIG. 1
by the blocked arrow
110
.
This means that once the orientation of the semiconductor device represented by the IC layout
100
of
FIG. 1
is determined relative to the routing wires through the IC layout
100
, the orientation cannot be subsequently changed. For example, the positioning of the IC layout
100
cannot be rotated ninety degrees. This is because the routing wires that pass freely through the routing channels represented by the arrows
108
along the x-axis
112
cannot pass freely along the y-axis
114
. Thus, the semiconductor designers and fabricators are restricted to the initially determined orientation.
Therefore, there is a need for improved flexibility in positioning semiconductor IC layouts relative to routing wires passing through routing channels among vias. Such improved flexibility should desirably ensure that the orientation of IC layouts relative to their routing wires can be rotated as necessary by semiconductor designers and fabricators. That is, the orientation of IC layouts relative to their routing wires can be reconfigured even after initial determination. For these and other reasons, there is a need for the present invention.
SUMMARY OF THE INVENTION
The invention relates to flexible routing channels among vias. A semiconductor device of an embodiment of the invention includes a number of metal layers, a number of dielectric layers, a number of via holes, and a number of routing channels. The metal layers are organized along a vertical axis. The dielectric layers are alternatively positioned relative to the metal layers. The via holes are situated within the dielectric layers and electrically connect a lower layer of the metal layers to an upper layer of the metal layers. The routing channels are situated within the metal layers and provide for electrical routing through the device along at least one of two horizontal axes of a horizontal plane perpendicular to the vertical axis.
Embodiments of the invention provide for advantages over the prior art. The routing channels enable a semiconductor layout of the semiconductor device to be rotated during the design and/or fabrication thereof without affect the electrical routing of wires or other metal elements through the routing channels. Thus, the orientation of the layout can be rotated relative to the routing wires even after initial determination thereof. That is, the layout can be rotated as necessary be designers and/or fabricators of the layout and the semiconductor device. Other advantages, embodiments, and aspects of the invention will become apparent by reading the detailed description that follows, and by referencing the attached drawings.
REFERENCES:
patent: 5500548 (1996-03-01), Smayling
patent: 6502231 (2002-12-01), Pang et al.
Cheng Chia-Lin
Hou Cliff
Lu Lee-Chung
Taiwan Semiconductor Manufacturing Co. Ltd
Tung & Associates
Vu Hung
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