Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2005-06-28
2005-06-28
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S288000, C438S030000
Reexamination Certificate
active
06911666
ABSTRACT:
A flexible metal foil substrate organic light emitting diode (OLED) display and a method for forming the same are provided. The method comprises: supplying a metal foil substrate such as titanium (Ti), Inconel alloy, or Kovar, having a thickness in the range of 10 to 500 microns; planarizing the metal foil substrate surface; depositing an electrical isolation layer having a thickness in the range of 0.5 to 2 microns overlying the planarized metal foil substrate surface; depositing amorphous silicon having a thickness in the range of 25 to 150 nanometers (nm) overlying the electrical insulation layer; from the amorphous silicon, forming polycrystalline silicon overlying the electrical insulation layer; forming thin-film transistors (TFTs) in the polycrystalline silicon; and, forming an electronic circuit using the TFTs, such as an OLED display.
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Coleman W. David
Curtin Joseph P.
Rabdau Matthew D.
Ripma David C.
Sharp Laboratories of America Inc.
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