Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1996-10-10
1999-02-23
Williams, Alexander Oscar
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257532, 257700, 257359, 257379, 257528, 257774, 257760, 361313, H01L 23053, H01L 2302, H01L 2348
Patent
active
058747702
ABSTRACT:
A method for fabricating a flexible interconnect film includes applying a resistor layer over one or both surfaces of a dielectric film; applying a metallization layer over the resistor layer with the resistor layer including a material facilitating adhesion of the dielectric film and the metallization layer; applying a capacitor dielectric layer over the metallization layer; and applying a capacitor electrode layer over the capacitor dielectric layer. The capacitor electrode layer is patterned to form a first capacitor electrode; the capacitor dielectric layer is patterned; the metallization layer is patterned to form a resistor; and the metallization layer and the resistor layer are patterned to form an inductor and a second capacitor electrode. In one embodiment, the dielectric film includes a polyimide, the resistor layer includes tantalum nitride, and the capacitor dielectric layer includes amorphous hydrogenated carbon or tantalum oxide. If the resistor and metallization layers are applied over both surfaces of the dielectric film, passive components can be fabricated on both surfaces of the dielectric film. The dielectric film can have vias therein with the resistor and metallization layers extending through the vias. A circuit chip can be attached and coupled to the passive components by metallization patterned through vias in an additional dielectric layer.
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Cole Herbert Stanley
Durocher Kevin Matthew
Saia Richard Joseph
Agosti Ann M.
General Electric Company
Snyder Marvin
Williams Alexander Oscar
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