Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2009-12-21
2011-11-08
Maldonado, Julio J (Department: 2823)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S149000, C438S459000, C438S479000, C257SE21568, C257SE21570
Reexamination Certificate
active
08053331
ABSTRACT:
Processes for transferring a semiconductor material to a polymer substrate to provide flexible semiconductor material include implanting ions to a predetermined depth in a semiconductor substrate, heat-treating the ion-implanted semiconductor substrate for a period of time and at a temperature effective to cause defect formation and enlargement of the implanted ion defect, adhering the ion-implanted, heat-treated substrate to a polymer substrate, and separating a semiconductor film such as a single crystal silicon film from the semiconductor substrate; and devices having single crystal silicon films disposed directly or indirectly on polymer films.
REFERENCES:
patent: 5374564 (1994-12-01), Bruel
patent: 5854123 (1998-12-01), Sato et al.
patent: 6372608 (2002-04-01), Shimoda et al.
patent: 6378635 (2002-04-01), Yoshida et al.
patent: 6544430 (2003-04-01), McCormack et al.
patent: 6680724 (2004-01-01), Lichtfuss
patent: 6696325 (2004-02-01), Tsai et al.
patent: 6710841 (2004-03-01), Tsang et al.
patent: 2002/0113548 (2002-08-01), Silvernail
patent: 2002/0176993 (2002-11-01), Graff et al.
patent: 2003/0077885 (2003-04-01), Aspar et al.
patent: 2003/0224582 (2003-12-01), Shimoda et al.
patent: 2004/0171232 (2004-09-01), Cayrefourcq et al.
patent: 2004/0224482 (2004-11-01), Kub et al.
patent: 2004/0229444 (2004-11-01), Couillard et al.
patent: 2006/0170077 (2006-08-01), Aoki et al.
M. Bruel, “Silicon on insulator material technology”, Electronics Letters, Jul. 6, 1995; vol. 31, No. 14, pp. 1201-1202.
L. Di Cioccio et al., “Silicon carbide on insulator formation using the Smart Cut process”, Electronics Letters, Jun. 6, 1996, vol. 32, No. 12, pp. 1144-1145.
D.Y. Khang et al., “A stretchable form of single-crystal silicon for high-performance electronics on rubber substrates”, Science, Jan. 13, 2006, vol. 311, pp. 208-212.
M. Bister et al., “Ranges of the 0.3-2 MeV H+and 0.7-2 MeV H2+Ions in Si and Ge”, Radiation Effects, 1982, vol. 59, p. 199-202.
M. Bruel, “Smart-Cut: A new Silicon on Insulator Material Technology Based on Hydrogen Implantation and Wafer Bonding”, Jpn. J. Appl. Phys. vol. 36 (1997) pp. 1639-1941.
Corning Incorporated
Maldonado Julio J
Watson Bruce P.
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