Static information storage and retrieval – Floating gate – Particular connection
Patent
1996-03-29
1997-07-08
Nguyen, Tan T.
Static information storage and retrieval
Floating gate
Particular connection
36518529, 36518533, 365218, 36518523, G11C 1600
Patent
active
056468903
ABSTRACT:
A flexible word-erase flash memory includes a first bank of flash transistors forming a plurality of rows and a plurality of columns, where the gates of transistors in each row are coupled to common wordlines, the drains of transistors in each column are coupled to common bitlines and the sources of the transistors in the first bank are all coupled to a first sourceline. A second bank of flash transistors form a plurality of rows and a plurality of columns, where the gates of transistors in each row are coupled to common wordlines, the drains of transistors in each column are coupled to common bitlines and the sources of the transistors in the second bank are all coupled to a second sourceline. A wordline decoder is coupled to the wordlines and configured to receive a wordline address signal and to decode the wordline address signal to select a wordline. A bitline decoder is coupled to the bitlines and configured to receive a bitline address signal and to decode the bitline address signal to select a predetermined plurality of bitlines. A sourceline latch is coupled to the first sourceline and the second sourceline and configured to latch a selected sourceline to selectively provide a sourceline erase voltage on the selected sourceline. Advantages of the invention include reduced stress on transistors not selected to be erased. This reduces program time by selectively erasing only those transistors needing reprogramming and promotes longevity of the flash memory transistors by erasing only the selected transistors.
REFERENCES:
patent: 4698787 (1987-10-01), Mukherjee et al.
patent: 4949309 (1990-08-01), Rao
patent: 5097444 (1992-03-01), Fong
patent: 5109361 (1992-04-01), Yim et al.
patent: 5185718 (1993-02-01), Rinerson et al.
patent: 5191556 (1993-03-01), Radjy
patent: 5315547 (1994-05-01), Skoji et al.
patent: 5337281 (1994-08-01), Kobayashi et al.
patent: 5365484 (1994-11-01), Cleveland et al.
patent: 5396459 (1995-03-01), Arakawa
patent: 5396468 (1995-03-01), Harari et al.
patent: 5491656 (1996-02-01), Sawada
Hsu Fu-Chang
Lee Peter W.
Tsao Hsing-Ya
Aplus Integrated Circuits, Inc.
Nguyen Tan T.
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