Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1996-11-08
1999-03-02
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
156345, 216 38, 216 84, 216 88, H01L 2100
Patent
active
058770887
ABSTRACT:
When the surface of a semiconductor device having at least two different films formed on a substrate is flattened by chemical mechanical polishing, the abrasion resistance upon polishing is detected by strain gauges provided close to the surface of the semiconductor device to be polished. In addition, the end of the polishing process is determined on the basis of the amount of change of the detected signals produced from the strain gauges.
REFERENCES:
patent: 4793895 (1988-12-01), Kaanta
Izumi Hirohiko
Samitsu Yamato
Nippon Steel Corporation
Powell William
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