Flattening method and apparatus for semiconductor device

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

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156345, 216 38, 216 84, 216 88, H01L 2100

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058770887

ABSTRACT:
When the surface of a semiconductor device having at least two different films formed on a substrate is flattened by chemical mechanical polishing, the abrasion resistance upon polishing is detected by strain gauges provided close to the surface of the semiconductor device to be polished. In addition, the end of the polishing process is determined on the basis of the amount of change of the detected signals produced from the strain gauges.

REFERENCES:
patent: 4793895 (1988-12-01), Kaanta

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