Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2003-07-21
2009-06-02
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257S200000, C257S201000, C257S592000, C257S623000
Reexamination Certificate
active
07541624
ABSTRACT:
A method for fabricating a bipolar transistor includes forming collector, base, and emitter semiconductor layers on a substrate such that the layers form a vertical sequence with respect to an adjacent surface of the substrate. The method includes etching away a portion of a top one of the semiconductor layers to expose a portion of the base semiconductor layer and then, growing semiconductor on the exposed portion of the base layer. The top one of the semiconductor layers is the layer of the sequence that is located farthest from the substrate. The growing causes grown semiconductor to laterally surround a vertical portion of the top one of the semiconductor layers.
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Definition of “sub” (definition 2b), Merriam-Webster's Collegiate Dictionary, Tenth Edition, 1993.
U.S. Appl. No. 10/243,369, filed Sep. 13, 2002, Y. Chen et al.
Chen Young-Kai
Kopf Rose Fasano
Sung Wei-Jer
Weimann Nils Guenter
Alcatel-Lucent USA Inc.
Lee Eugene
McCabe John F.
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