Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-12-14
2009-12-29
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000
Reexamination Certificate
active
07638803
ABSTRACT:
Provided is a flat panel display device and a method for fabricating the same. The flat panel display device comprises a first substrate, a light emitting unit, a second substrate, and insulating films. The light emitting unit comprises thin film transistors positioned on the first substrate, a first electrode electrically connecting with the thin film transistors, a second electrode facing the first electrode, and an emission layer or a liquid crystal layer interposed between the first and second electrodes. The second substrate is sealed with the first substrate by an ultraviolet curing sealant, and has a greater thermal expansion coefficient than the first substrate. The insulating films are positioned on one or more surfaces of the first and/or second substrates.
REFERENCES:
patent: 6169708 (2001-01-01), Kaneko et al.
patent: 7230271 (2007-06-01), Yamazaki et al.
patent: 2004/0061118 (2004-04-01), Yamazaki et al.
patent: 2004/0090588 (2004-05-01), Kim et al.
Lee Kwang Yeon
Lee Seung Kyu
Park Jae Yong
Brinks Hofer Gilson & Lione
Jahan Bilkis
LG. Display Co. Ltd.
Louie Wai-Sing
LandOfFree
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