Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-07-29
2008-10-21
Booth, Richard A. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C438S030000
Reexamination Certificate
active
07439539
ABSTRACT:
A flat panel display device (FPD) and fabricating method thereof are disclosed, which reduce the number of masks during fabrication and prevent electrochemical corrosion problems. In the FPD, a cell area and a pad area are defined on a substrate. A storage electrode traverses an active layer in parallel to a gate line. Source and drain regions of the active layer in the vicinity of both sides of a gate electrode are not formed below the storage electrode. An insulating interlayer over the substrate has first and second contact holes on the source and drain regions, respectively. A source electrode contacts the source region via a first contact hole and a drain electrode contacts the drain region via a second contact hole to directly contact a pixel electrode. A protective layer is disposed over the substrate including the pixel electrode.
REFERENCES:
patent: 5396084 (1995-03-01), Matsumoto
patent: 5409851 (1995-04-01), Oh
patent: 6188452 (2001-02-01), Kim et al.
patent: 6204081 (2001-03-01), Kim et al.
Hong Soon Kwang
Jeoung Hun
Booth Richard A.
Brinks Hofer Gilson & Lione
LG Display Co. Ltd.
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