Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2004-04-14
2008-08-26
Sefer, Ahmed (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S066000, C257S401000, C257SE29137, C257SE29278, C257SE29279
Reexamination Certificate
active
07417252
ABSTRACT:
The present invention discloses a high-speed flat panel display with a long lifetime, wherein thin film transistors in a pixel array portion in which a plurality of pixels are arranged and a driving circuit portion for driving the pixels of the pixel array portion, have different resistance values than each other or have different geometric structures than each other. The flat panel display comprises a pixel array portion where a plurality of pixels are arranged, and a driving circuit portion for driving the pixels of the pixel array portion. The thin film transistors in the pixel array portion and the driving circuit portion have different resistance values in their gate regions or drain regions than each other, or have different geometric structures than each other. One of the thin film transistors in the pixel array portion and the thin film transistors in the driving circuit has zigzag shape in its gate region or drain region or has an offset region.
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Koo Jae-Bon
Lee Ki-Yong
Lee Ul-Ho
Park Ji-Yong
Park Sang-Il
H.C. Park & Associates PLC
Samsung SDI & Co., Ltd.
Sefer Ahmed
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