Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2008-01-22
2008-01-22
Vu, David H. (Department: 2821)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S200000, C257S202000
Reexamination Certificate
active
11023658
ABSTRACT:
The claimed invention is directed to a flat panel display having R, G, and B unit pixels. At least one of the R, G, and B unit pixels includes at least two or more transistors, each having source and drain regions. At least one drain region in the source/drain regions of at least one transistor in the transistors has a resistance value different from a resistance value of at least a drain region of the other transistor. The difference in resistance values may be accomplished by doping each drain region with a different concentration of dopant or by shaping each drain region differently.
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Liu Chuanzhen, et al.; Si-TFT Active Matrix LCD; Chinese Journal of Liquid Crystals and Displays, vol. 14. No. 2, pp. 137-144; Jun. 1999.
Koo Jae Bon
Park Sang-Il
H.C. Park & Associates PLC
Samsung SDI & Co., Ltd.
Vu David H.
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