Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2011-04-12
2011-04-12
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S040000, C257S059000, C257SE21113, C257SE21134
Reexamination Certificate
active
07923736
ABSTRACT:
A bottom gate thin film transistor (TFT), a flat panel display having the same, and a method of fabricating the same are disclosed. The TFT comprises a gate electrode disposed on a substrate, and a gate insulating layer disposed on the gate electrode. A semiconductor layer is disposed on the gate insulating layer and crossing over the gate electrode, and is crystallized by an MILC technique. An inter-insulating layer is disposed on the semiconductor layer and comprises source and drain contact holes which expose portions of the semiconductor layer. The source and drain contact holes are separated from at least one edge of the semiconductor layer crossing over the gate electrode. The semiconductor layer comprises conductive MIC regions corresponding to the exposed portions of the semiconductor layer in the source and drain contact holes.
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Knobbe Martens & Olson Bear LLP.
Le Dung A.
Samsung Mobile Display Co., Ltd.
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