Flat-panel detector with avalanche gain

Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system

Reexamination Certificate

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C250S370110, C250S371000

Reexamination Certificate

active

11201658

ABSTRACT:
The present invention is an indirect AMFPI wherein a phosphor such as a structured cesium iodide (CsI) is used to convert x-ray energy to optical photons or a charge, which is then detected by a two-dimensional array of either thin-film transistors (TFTs) such as an amorphous a-Se TFTs or a photodiode array. A scanning control circuit generates pulses to turn on the TFTs one row at a time, and thus the charge in the individual arrays is transferred from the TFT to one or more external charge-sensitive amplifiers. The charge-sensitive amplifiers are shared by all the pixels in the same column. The two-dimensional array can be read in real time.

REFERENCES:
patent: 5198673 (1993-03-01), Rougeot et al.
patent: 5739522 (1998-04-01), Ouimette
patent: 6078643 (2000-06-01), Vogelsong et al.
Wei Xhao et al.;“Indirect Flat-Panel Detector with Avalanche Gain”; Medical Imaging 2004;Physics of Medical Imaging 15-17; Feb. 2004, San Diego, CA. USA; SPIE—The International Society for Optical Engineering SPIE-Int.; Soc. Opt. Eng USA; ISSN: 0277-786X.
Hunt, Dylan C; “X-Ray Imaging with Amorphous Selenium: X-Ray to Charge Conversion Gain and Avalanche Multiplication Gain”; Medical Physics, American Institute of Physics, New York, US; vol. 29; No. 11; Nov. 2002; pp. 2464-2471, XP012011640; ISSN: 0094-2405.

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