Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With large area flexible electrodes in press contact with...
Patent
1996-12-17
1999-02-23
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With large area flexible electrodes in press contact with...
257685, 257723, 257689, 257726, 257178, 257181, H01L 23043, H01L 2978, H01L 2342
Patent
active
058747745
ABSTRACT:
A semiconductor device is provided which includes a plurality of semiconductor chips each of which has a first main electrode and a control electrode on a first main surface and a second main electrode on a second main surface, and a plurality of support plates each of which is secured to the second main surface of the corresponding semiconductor chip. These semiconductor chips and support plates constitute individual semiconductor elements. The semiconductor elements are accommodated in the flat package that includes first and second common electrode plates and an insulating sleeve interposed between the common electrode plates, such that the semiconductor chip and the support plates are positioned by positioning guides. The first common electrode plate is in contact under pressure with the support plates. The semiconductor device further includes a plurality of contact terminal blocks each of which is disposed between the second common electrode and the first main electrode of the corresponding semiconductor chip so as to apply a pressure to the semiconductor chip and serve as a conductor and a heat radiator.
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Fuji Electric & Co., Ltd.
Thomas Tom
Williams Alexander Oscar
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