Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2009-06-10
2011-12-06
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S040000, C257S103000, C257SE33066
Reexamination Certificate
active
08071999
ABSTRACT:
A flat lighting device includes a layer arrangement, anode and cathode contact regions. The layer arrangement includes an anode layer, a cathode layer, and an organic light-emitting layer arranged between the anode and cathode layers, the layer arrangement having a flat shape which is laterally bounded by an edge region. The anode contact regions contact the anode layer and are implemented along the edge region. The cathode contact regions contact the cathode layer and are implemented along the edge region. The flat shape has a rotational invariance toward rotation by discrete angles. The anode and cathode contact regions may be contacted from one side of the flat shape of the layer arrangement and are arranged to be laterally distributed over the edge region such that the lateral distribution of the anode and cathode contact regions is maintained upon rotation of the layer arrangement by the discrete angles.
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patent: 7944144 (2011-05-01), Gomi
patent: 2008/0048948 (2008-02-01), Koh et al.
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Amelung Joerg
Hesse Jan
Hoffmann Michael
Kirchhof Christian
Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung
Glenn Michael A.
Glenn Patent Group
Ngo Ngan
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