Flat display active plate

Details Flat display active plate Flat display active plate

2011-08-30

2011-08-30

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S099000, C257S040000, C257SE33001, C257SE25008, C257SE51018, C313S504000, C428S690000

Reexamination Certificate

active

08008109

ABSTRACT:
A method for manufacturing the active plate of a flat matrix display screen, in which each cell comprises an electrode plate connected by a transistor to a first conductive line, comprising the steps of providing an outgrowth coated with an insulator of each first conductive line at the level of each cell; etching or making porous an end portion of each outgrowth; laterally growing, for example, by a VLS method, a PIP or NIN semiconductor structure in each end portion which has been etched or made porous; and establishing a contact at the free end of the semiconductor structure and forming a gate at the level of the median portion of the semiconductor structure.

REFERENCES:
patent: 2004/0017520 (2004-01-01), Yoo et al.
patent: 2006/0292870 (2006-12-01), Pribat
patent: 2 860 780 (2005-04-01), None
Lew et al. “Growth Characteristics Of Silicon Mamowires Synthesized By Vapor-Liquid-Solid Growt IN Nanoporous Alumina Templates”, Journal of Crystal Growth 254 (2003) pp. 14-22.
Pribat et al. “Lateral Alumina Templates for Carbon Nanotubes and Semiconductor Nanowire Synthesis”, Quantum Sensing and Nanophotonic Devices, II, vol. 5732, Mar. 2005.
Redwing et al. “Synthesis and Properties of Si and SiGe/Si Nanowires”, Proceddings of SPIE, Quantum Dots, Nanoparaticles and Nanoclusters, vol. 5361, 52 (2004).
International Search Report dated Mar. 14, 2007.

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