Flat cell read only memory using common contacts for bit...

Static information storage and retrieval – Read only systems – Semiconductive

Reexamination Certificate

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Details

C365S072000, C365S185160, C365S214000

Reexamination Certificate

active

07436690

ABSTRACT:
In a flat cell read only memory, two bit lines or two virtual ground lines share a common contact such that the contact is slightly adjustable in its location for inserting a local metal word line without increasing the layout area to improve the reading speed of the memory. Moreover, two adjacent banks of the memory share common bit lines or virtual ground lines, whereby reducing the contact density and height of the memory.

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patent: 7154765 (2006-12-01), Chen

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