Flat-band voltage reference

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307296, 307304, 357 23, 357 41, 357 54, H03K 112, H03K 100, H03K 102, H03K 3353

Patent

active

039756483

ABSTRACT:
A flat-band voltage reference includes two insulated-gate field-effect transistors, hereinafter IGFETs, which are substantially identical except for their flat-band voltage characteristics and which are biased to carry equal drain currents at equal drain voltages. The resulting difference in potential between the gate contacts of the IGFETs produces a voltage reference which is substantially independent of variances in operating points, supply potentials, and temperature.

REFERENCES:
patent: 3673471 (1972-06-01), Klein et al.
patent: 3806742 (1974-04-01), Powell
patent: 3868274 (1975-02-01), Hubar et al.
patent: 3870906 (1975-03-01), Hughes
patent: 3875430 (1975-04-01), Prak
MacHattie "A Highly Stable Current or Voltage Source" J. of Physics E: Scientific Instruments (GB) vol. 5 (10/72) pp. 1016-1017.

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