Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2011-08-23
2011-08-23
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Floating gate
Multiple values
C365S185110, C365S185140
Reexamination Certificate
active
08004888
ABSTRACT:
Flash memory systems and methods for facilitating a single logical cell erasure in a flash memory device whereby logical cell mapping is changed from using a single physical cell to using pair physical cells, thereby creating a single program and erase entity as a single logical cell. By mapping two adjacent physical cells as a single logical cell, the flash memory device can be programmed and erased on a single bit or variable bit length basis with conventional technologies. Various operations can be performed on a flash device on a basis of the single program and erase entity.
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Nguyen Hien N
Nguyen Vanthu
Spansion LLC
Turocy & Watson LLP
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