Flash memory with split gate structure and method of fabricating

Details Flash memory with split gate structure and method of fabricating Flash memory with split gate structure and method of fabricating

1999-08-10

2000-08-22

Fears, Terrell W.

Static information storage and retrieval

Floating gate

Particular biasing

36518529, 365 51, G11C 700

Patent

active

061082422

ABSTRACT:
A flash memory with a split gate. The flash memory is formed on a semiconductor substrate, comprising a channel region, a tunnel oxide layer, a floating gate, a control gate, a dielectric layer and two source/drain regions. The channel region is located on a surface of the semiconductor substrate and partly covered by the floating gate. The floating gate is funnelform, that is, having a gradually diffusing cross sectional profile from a bottom surface to a top surface, and has a tunnel oxide layer to isolate with the semiconductor substrate, and there is an annulus tip on the rim of the top surface. The dielectric layer is located on a part of the top surface and a sidewall of the floating gate and a part of the channel region uncovered by the floating gate. The control gate is formed on the dielectric layer, and the source/drain regions are formed in the semiconductor at both sides of the channel region. The flash memory further comprises a reverse triangular doped region is formed by a delta doping step, and therefore, the source line capacitance is reduced to be advantageous to anti-punch through effect. Further, compared to conventional method, the annulus tip with a sharper profile has a greatly improved operation speed with a reduced erasure voltage.

REFERENCES:
patent: 5070032 (1991-12-01), Yuan

Affiliated with

Also associated with

Rating

Flash memory with split gate structure and method of fabricating does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Flash memory with split gate structure and method of fabricating, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flash memory with split gate structure and method of fabricating will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-588578