Flash memory with negative voltage generator for data erasure

Static information storage and retrieval – Floating gate – Particular biasing

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36518907, 36518909, G11C 1604

Patent

active

061512559

ABSTRACT:
A flash memory which is electrically erasable programmable and has a negative voltage generator for data erasure. The negative voltage generator comprises a charge pump for pumping a negative charge, a regulator for regulating the level of an output voltage from the charge pump according to the level of a supply voltage, and a negative voltage supply for supplying a voltage of the level regulated by the regulator to a gate of a memory cell transistor. This construction of the negative voltage generator enables a data erase operation of the flash memory to be performed under the condition that an output voltage from the negative voltage supply is applied to the gate of the cell transistor, the supply voltage is applied to a source of the cell transistor and a drain of the cell transistor floats. Further, a sufficient amount of erase current is secured by the voltages applied to the source and gate of the cell transistor for the data erase operation. Moreover, the negative voltage generator compensates for a variation in the supply voltage suffered by the source side. Therefore, the flash memory of the present invention is capable of performing a stable data erase operation.

REFERENCES:
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patent: 5442586 (1995-08-01), Javanifard et al.
patent: 5553295 (1996-09-01), Pantelakis et al.
patent: 5721707 (1998-02-01), Villa et al.
patent: 5801987 (1998-09-01), Dinh
patent: 5920505 (1999-07-01), Sali et al.

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