Flash memory with multi-bit read

Details Flash memory with multi-bit read Flash memory with multi-bit read

2008-04-08

2010-06-15

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Floating gate

Multiple values

C365S185090

Reexamination Certificate

active

07738292

ABSTRACT:
A memory device is described that uses extra data bits stored in a multi-level cell (MLC) to provide error information. An example embodiment provides a memory cell that uses more than 2Xlogic levels to store X data bits and an error bit. At least one extra bit provided during a read operation is used to provide error information or a confidence factor of the X data bits originally stored in the cell.

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