Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2008-05-06
2008-05-06
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185020, C365S185090, C365S200000
Reexamination Certificate
active
07369434
ABSTRACT:
A memory device is described that uses extra data bits stored in a multi-level cell (MLC) to provide error information. An example embodiment provides a memory cell that uses more than 2Xlogic levels to store X data bits and an error bit. At least one extra bit provided during a read operation is used to provide error information or a confidence factor of the X data bits originally stored in the cell.
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Micro)n Technology, Inc.
Nguyen Tan T.
Schwegman Lundberg & Woessner, P.A.
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