Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-08-30
2005-08-30
Ho, Hoai (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185110, C365S185230, C365S230030, C365S230060, C365S230080
Reexamination Certificate
active
06937519
ABSTRACT:
A flash memory device and system include a boot block voltage pump for providing a word line voltage to the boot block of the flash memory. At least one additional voltage pump is provided to supply a word line voltage to the remaining memory blocks. The memory device can be operated according to a specification where data stored in the boot block can be read as valid data before data stored in other memory blocks can be validly read upon memory activation.
REFERENCES:
patent: 5339279 (1994-08-01), Toms et al.
patent: 5519654 (1996-05-01), Kato et al.
patent: 5659501 (1997-08-01), Baldi et al.
patent: 5774399 (1998-06-01), Kwon
patent: 5995417 (1999-11-01), Chen et al.
patent: 6018479 (2000-01-01), Jeong
patent: 6026465 (2000-02-01), Mills et al.
patent: 6094095 (2000-07-01), Murray et al.
patent: 6111468 (2000-08-01), Tanishima
patent: 6160749 (2000-12-01), Pinkham et al.
patent: 6255896 (2001-07-01), Li et al.
patent: 6289449 (2001-09-01), Aguilar et al.
patent: 6760017 (2004-07-01), Banerjee et al.
“Flash Memory”,1998 Flash Memory Data Book, Micron Quantum Devices, Inc.,(1998),p. 1-1 to p. 1-27.
Chevallier Christophe J.
Vahidimowlavi Allahyar
Ho Hoai
Pham Ly Duy
Schwegman Lundberg Woessner & Kluth P.A.
LandOfFree
Flash memory with fast boot block access does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Flash memory with fast boot block access, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flash memory with fast boot block access will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3485779