Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-06-06
2006-06-06
Elms, Richard (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185140, C365S185150
Reexamination Certificate
active
07057931
ABSTRACT:
A method for programming a storage element and a storage element programmed using gate induced junction leakage current are provided. The element may include at least a floating gate on a substrate, an active region in the substrate, and a second gate adjacent to the floating gate. The method may include the steps of: creating an inversion region in the substrate below the floating gate by biasing the first gate; and creating a critical electric field adjacent to the second gate. Creating a critical electric field may comprise applying a first positive bias to the active region; and applying a bias less than the first positive bias to the second gate. The element further includes a first bias greater than zero volts applied to the active region and a second bias greater than the first bias applied to the floating gate and a third bias less than or equal to zero applied to the second gate. The first and third bias are selected to create leakage current in the substrate between the floating gate and the select gate.
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Lutze Jeffrey W.
Pang Chan-Sui
Elms Richard
Hur J. H.
Sandisk Corporation
Vierra Magen Marcus & DeNiro LLP
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