Flash memory program control circuit and method for...

Details Flash memory program control circuit and method for... Flash memory program control circuit and method for...

2006-05-23

2006-05-23

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185230

Reexamination Certificate

active

07050334

ABSTRACT:
Provided are a program control circuit for flash memory devices and a control method utilizing such a circuit for controlling the bit line voltage level during programming operations for flash memory devices that include memory cells arranged in the form of a matrix, in which each of the memory cells is connected to a word line, a bit line, and a source line and which provides a program current to the bit line. The program control circuit includes a voltage level sensing control portion, a switching control portion, a current sink and a switching circuit. The voltage level sensing control portion is enabled or disabled in response to a first program control signal and compares the voltage of a bit line connected to a memory cell being programmed with a reference voltage and outputs a voltage control signal corresponding to the result of the comparison. The switching control portion outputs a switching bias signal in response to the voltage control signal and a second program control signal. The current sink provides a predetermined current to a ground voltage in response to a reference bias signal. The switching circuit, which is connected between the bit line and the current sink, is turned on or off in response to the switching bias signal.

REFERENCES:
patent: 6014331 (2000-01-01), Chih
patent: 6026024 (2000-02-01), Odani et al.
patent: 6038174 (2000-03-01), Khan et al.
patent: 6104637 (2000-08-01), Seo
patent: 6141253 (2000-10-01), Lin

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