Flash memory having a side wall immediately adjacent the side of

Details Flash memory having a side wall immediately adjacent the side of Flash memory having a side wall immediately adjacent the side of

1995-04-18

1996-10-22

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular biasing

3651853, 257315, 257322, 257324, 257900, G11C 1134

Patent

active

055684220

ABSTRACT:
Flash memories are produced by a novel production method according to the invention, the method comprising removing field insulation films by an etching process using side walls provided adjacent to gate portions consisting essentially of a floating gate electrode, a control gate electrode, and an inter-gate insulation film, as part of a mask for the etching. The inventive method allows the production of higher integrated flash memories without causing damage, particularly degradation of dielectric strength, to the portion of a gate insulation film situated between part of the floating gate electrode and an impurity diffused source electrode formed in the substrate.

REFERENCES:
patent: 4972371 (1990-11-01), Komori et al.
patent: 5233210 (1993-08-01), Kodama
patent: 5264718 (1993-11-01), Gill
patent: 5297082 (1994-03-01), Lee

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