Flash memory device with multi level cell and burst access...

Details Flash memory device with multi level cell and burst access... Flash memory device with multi level cell and burst access...

2009-11-10

2011-10-25

Nguyen, Dang (Department: 2824)

Static information storage and retrieval

Floating gate

Multiple values

C365S185180, C365S185220

Reexamination Certificate

active

08045376

ABSTRACT:
A flash memory device including memory cells, each memory cell configured to store bits, a sensing circuit configured to sequentially sense, for each memory cell, sets of the bits of the memory cell, a data rearrangement unit configured to receive words of data and to rearrange bits of the words to be stored in the memory cells, and an output circuit configured to output a group of the words using the sets of bits from one sensing, at least as early as during a subsequent sensing of sets of bits.

REFERENCES:
patent: 6097635 (2000-08-01), Chang
patent: 6324115 (2001-11-01), Choi
patent: 6385110 (2002-05-01), Deguchi
patent: 6427025 (2002-07-01), Shimomura et al.
patent: 6483743 (2002-11-01), Talreja
patent: 2003/0002334 (2003-01-01), Ho Chang
patent: 2008/0177934 (2008-07-01), Yu et al.
patent: 08-315586 (1996-11-01), None
patent: 10-233096 (1998-09-01), None
patent: 2005-7653 (2001-01-01), None

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