Flash memory device with improved programming performance

Details Flash memory device with improved programming performance Flash memory device with improved programming performance

2007-10-09

2007-10-09

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185220

Reexamination Certificate

active

11522600

ABSTRACT:
A selected word line that is coupled to a cell to be programmed is biased during a program operation. The unselected word lines are biased with a negative potential to reduce the cell leakage at programming bit line potential. A programming pulse is applied to the bit line coupled to the cell to be programmed. During verification, the unselected word lines are biased back to ground potential.

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