Flash memory device with improved programming performance

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

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Details

C365S185280

Reexamination Certificate

active

07120055

ABSTRACT:
A selected wordline that is coupled to a cell to be programmed is biased during a program operation. The unselected wordlines are biased with a negative potential to reduce the cell leakage at programming bitline potential. A programming pulse is applied to the bitline coupled to the cell to be programmed. During verification, the unselected wordlines are biased back to ground potential.

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