Flash memory device including bit line voltage clamp circuit...

Details Flash memory device including bit line voltage clamp circuit... Flash memory device including bit line voltage clamp circuit...

2007-07-31

2007-07-31

Tran, Michael (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185240

Reexamination Certificate

active

11146740

ABSTRACT:
In a flash memory device and a bit line voltage control method thereof a circuit capable of reducing the change in a voltage of a bit line during programming. The flash memory device includes: a flash memory cell, a source of which is connected to a source line, a drain of which is connected to a bit line and a gate of which is connected to a word line; a word line voltage generation circuit connected to the word line, for generating and providing a word line voltage to the word line; a program current generation circuit connected to the bit line, for generating and providing a program current to the bit line; and a bit line voltage clamp circuit connected to the bit line and the word line, for sensing a voltage of the bit line and controlling a bias current of the word line voltage generation circuit to thereby control a voltage of the bit line, during a programming operation of the flash memory device. Therefore, it is possible to enhance program efficiency and reduce program disturbance by constantly maintaining the voltage of the bit line to a desired voltage using a bit line voltage clamp circuit during programming.

REFERENCES:
patent: 6128221 (2000-10-01), Chih
patent: 7042765 (2006-05-01), Sibigtroth et al.
patent: 2001/0028590 (2001-10-01), Ishikawa et al.
patent: 2000-251487 (2000-09-01), None
patent: 10-2004-0008517 (2004-01-01), None

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