Flash memory device having increased over-erase correction...

Details Flash memory device having increased over-erase correction... Flash memory device having increased over-erase correction...

2004-11-01

2009-10-06

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S028000

Reexamination Certificate

active

07599228

ABSTRACT:
A memory device is provided including circuitry for correcting an over-erased memory cell in the memory device. The memory device may include a substrate. A control gate and a floating gate may be formed over the substrate. The memory device may include a source region and a drain region. A first resistive element may be coupled between the source region and the control gate.

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