Flash memory device having improved program rate

Details Flash memory device having improved program rate Flash memory device having improved program rate

2007-12-11

2007-12-11

Phan, Trong (Department: 2827)

Static information storage and retrieval

Floating gate

Multiple values

C365S185180, C365S185220

Reexamination Certificate

active

11212850

ABSTRACT:
A method is provided for programming a nonvolatile memory device including an array of memory cells, where each memory cell including a substrate, a control gate, a charge storage element, a source region and a drain region. The method includes receiving a programming window that identifies a plurality of memory cells in the array. A first group of memory cells to be programmed is identified from the plurality of memory cells in the programming window. The first group of memory cells is programmed and a programming state of the first group of memory cells is verified.

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