Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-04-29
2008-04-29
Nguyen, Viet Q. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185170, C365S185190, C365S185290, C365S185240, C365S218000
Reexamination Certificate
active
11670383
ABSTRACT:
We describe a NAND flash memory device including a memory cell array formed on a substrate including a plurality of cell strings each including a string selecting transistor, a ground selecting transistor, and plural memory cells serially coupled between the string selecting transistor and the ground selecting transistor. A high voltage generator is configured to supply a bulk voltage to the substrate and an erase control circuit is configured to stepwise increase the bulk voltage during a first period of an erase operation and to maintain the bulk voltage substantially constant during a second period of the erase operation.
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Marger & Johnson & McCollom, P.C.
Nguyen Viet Q.
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